BSP135 H6327
Manufacturer:
Infineon
Mfr.Part #:
BSP135 H6327
Datasheet:
Description:
MOSFETs PG-SOT223-4 SMD/SMT N-Channel number of channels:1 1.8 W 600 V Continuous Drain Current (ID):120 mA 3.7 nC
| Parameter | Value |
|---|---|
| Length | 6.5 mm |
| Width | 3.5 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Height | 1.5 mm |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 600 V |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current | 12 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 1.8 W |
| Power Dissipation | 1.8 W |
| Number of Channels | 1 |
| Input capacitance | 98 pF |
| Continuous Drain Current (ID) | 120 mA |
| Rds On Max | 45 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Turn-On Delay Time | 5.4 ns |
| Turn-Off Delay Time | 28 ns |
| Element Configuration | Single |
| Rise Time | 5.6 ns |
| Gate Charge | 3.7 nC |
| Drain to Source Resistance | 25 Ω |
| Max Dual Supply Voltage | 600 V |
| Recovery Time | 130 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| On-State Resistance | 45 Ω |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 2.1 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 47350
Distributors
pcbx
pcbxUnit Price$1.01993
Ext.Price$1.01993
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.01993 | $1.01993 |
| 10 | $0.64462 | $6.44620 |
| 25 | $0.56325 | $14.08125 |
| 50 | $0.49215 | $24.60750 |
| 100 | $0.43003 | $43.00300 |
| 300 | $0.38919 | $116.75700 |
| 500 | $0.35223 | $176.11500 |
| 1000 | $0.30777 | $307.77000 |
| 3000 | $0.28142 | $844.26000 |
| 5000 | $0.25733 | $1286.65000 |
| 10000 | $0.25391 | $2539.10000 |